ucti, ijnc. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SB1566 description ? collector-emitter breakdown voltage- : v(br)ceo= -50v(min) ? low collector saturation voltage- : vce(sa.)= -1 .ov(max)@ (|c= -2a, ib= -0.2a) ? wide area of safe operation ? complement to type 2sd2395 applications ? designed for power amplifications. absolute maximum ratings(ta=25c) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ta=25r collector power dissipation @tc=25'c junction temperature storage temperature value -60 -50 -5 -3 -4.5 2 25 150 -55-150 unit v v v a a w ?c 'c 1 ^ iii pin 1. base ff i 2. collector i i j 3.bu1itter 2 3 to-22qfa package > i j 1 *r w, i ? o : r~n- h , i > t , i i i b? ?. _^.$. 3~? o -*r' dim a b c d f g (-1 j k l n o r s li tf *? ff ?~ ^ mm win 1635 9.90 4.35 0.75 3.20 6.90 3.70 0.45 13.35 1.10 4.9s 4^5 2.95 2.70 1.75 1.30 max 17.15 10.10 4.65 0.80 3.40 7.10 3.90 0.75 13.65 1.30 5.18 5.15 3^5 2.90 2.05 1.50 . i i i ' ' ? . 1 j l nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SB1566 electrical characteristics tj=25'c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vbe(sat) icbo iebo hpe fi cob parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product collector output capacitance conditions lc= -1ma; !b= 0 lc= -50 v- a; ie= 0 ie= -50 11 a; lc= 0 lc= -2a; ib= -0.2a ig= -2a; ib= -0.2a vcb= -60v; ie= 0 veb= -7v; lc= 0 lc= -0.5a; vce= -3v lc= -0.5a;vce= -5v; f,est= 5mhz le=0;vce=-10v;ftest=1mhz min -50 -60 -7 100 typ. 60 40 max -1.0 -1.5 -10 -10 320 unit v v v v v ua ua mhz pf ? hfe classifications e 100-200 f 160-320
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